Abstract
Etching mechanism and etched surface morphology of Si{111} is totally differs from that of the other orientations. It has slowest etch rate in all kinds of wet anisotropic etchants. Generally, the etched surface morphology of Si{111} much smoother than other orientations and may vary with etching parameters such as etchant type, etching temperature. To extract the accurate information of very smooth surface, characterization technique plays an important role. In this work we present the topographical analysis of etched Si{111} surfaces using SEM and AFM techniques. Etching is performed in different concentrations of tetramethylammonium hydroxide (TMAH) at two different temperatures.
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