Abstract
Copper Sulfide CuS thin film was prepared using pulsed laser deposition PLD technique and characterized by X-ray and SEM. The optical, structural, and morphological properties are examined at different energies 500 mJ, 600 mJ, 700 mJ, and 800 mJ. The best result was 600 mJ which annealed at various annealing temperatures 300°C, 350°C, 400°C, and 450°C. The effect of thermal annealing on CuS thin film was examined X-ray and SEM. CuS Film was simulated using a prism-based SPR optical sensor. This paper introduces the optical test study of CuS thin film deposited by pulsed laser deposition technique on the quartz substrate and supported by theoretical application study under the effect of surface plasmon resonance (SPR). In this research field, the optical and morphological characteristics of the CuS thin film were deposited by PLD at different laser energies. The annealing process was applied for better-deposited thin-film; the XRD results, SEM images, transmittance T%, and energy gap Eg were analyzed thoroughly and compared to evaluate the thin-film. This effort was made in an in-depth analysis of CuS thin film deposited by PLD on the quartz substrate and applied theoretically in surface plasmon application.
Highlights
There has been a growing interest in the last few decades using semiconductor chalcogenide thinfilm such as Copper sulfide (CuS)
The scanning electron microscopy (SEM) image after annealing temperatures shows a substantial variation in particle size as well as the proportional intensity of X-Ray's work
Compared to other sensing layers of different kinds of literature [18] [19] [20], this range of thickness variation in the surface plasmon resonance (SPR) curve looks very interesting, even at 50 nm thickness, which is very difficult to get with other types of material
Summary
There has been a growing interest in the last few decades using semiconductor chalcogenide thinfilm such as Copper sulfide (CuS). Copper sulfide can quickly form a series of nonstoichiometric compounds, depends on the exact composition CuxS (x=1-2) with a crystal structure varying from orthogonal to hexagonal. The high absorbance of the CuS thin films used for photo-thermal solar energy conversion [2]. The high electrical conductivity and low cost (in price) preparation CuS is considered a perfect semiconductor material. Single crystal and simple thin-film forms related to its structural and electrical properties made it an excellent choice in sensor applications such as pH sensors. These characteristics are fully controlled or dependent on the preparation method and the deposition conditions dominating thin film growth [3]. Since the composition's annealing temperature was successful and good optical properties, the composition needs enhancement, so we chose variable annealing temperatures
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
