Abstract
The temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/por-Si/p-Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por-Si/p-Si heterojunction, carrier tunneling in the por-Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.
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