Abstract
Lead sulphide thin films have been deposited by conventional chemical bath technique. The effect of Cu doping is studied on the resistivity and the band gap of these films. An anamolous behavior is obtained in the case of variation of band gap with impurity (mol%) which shows that certain values of impurity have prominent features. While the resistivity decreases first with the increase in impurity, after a particular value the resistivity adopts a rising trend, and on still higher doping the decreased resistivity again starts to take place.
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