Abstract
A study of the ion implantation of Cu +, Ag + or Au + ions into different types of silicate glasses is reported. The energy of the implanted ions was 330 keV and the implantation fluence was kept at 1 × 10 16 cm − 2 . The samples were characterised by various analytical methods: Rutherford backscattering spectrometry for the concentration depth profiles of the implanted atoms, Raman spectroscopy for the structure of the samples and also by UV–VIS absorption spectroscopy. The obtained data were evaluated on the bases of the structure of the glass matrix and the relations between the structural changes and optical properties, important for photonics applications, were formulated. The main focus was the impact of various types and concentrations of glass network modifiers (e.g. Li, Na, K, Mg, Ca or Zn) as well as glass network formers (Si, and B) on the projected range of the implanted ions. Interesting results were also provided by a study of the annealing of the as-implanted samples in various types of glass substrates. The study showed that each of the implanted ions migrated in the substrates with different glass structures via unique mechanisms.
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