Abstract
CoSi 2 formation from Co–Ni alloys with 25 and 10% Ni content was investigated. Samples with various Co–Ni/Ti stacks were characterized by four-point probe, AES, XRD, RBS and TEM. Light scattering measurements were carried out for roughness evaluation. Stress build-up was estimated from room temperature measurements of wafer curvature. It was found that Co disilicide formation temperature decreases with an increase of the Ni percentage. CoSi 2 growth at temperatures around 450–500°C depending on Ni concentration and Ti cap thickness was observed. Sheet resistance of 5–6.5 Ω/sq. was measured for various Co–Ni/Ti compositions. CoSi 2(220) and CoSi 2(111) peaks were detected on XRD spectra for both Ni-rich and Ni-poor layer. Stress values of 0.9–1.9 GPa were calculated for silicidation of various Co–Ni/Ti stacks. The roughness of the silicide film was found to be dependent on Ni concentration, Ti cap thickness and anneal temperature.
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