Abstract

Wet transferring of chemical vapor deposition (CVD) graphene with the assistance of poly(methyl methacrylate) (PMMA) usually leaves polymer contaminations onto graphene surface. Knowledge about the influence of PMMA residues on organic film growth properties is crucial for graphene-related organic electronic devices. In this study, we investigate growth properties of coper-phthalocyanine (CuPc) and pentacene on PMMA contaminated graphene substrate. Grain size and morphologies of CuPc and pentacene films were found to be governed by the density of PMMA residues on graphene. Nevertheless, the molecular packing structures of CuPc and pentacene respond differently with the density with PMMA residues. CuPc molecules tend to nucleated into grains with molecular π-π stacking parallel to graphene surface, which is irrespective of the PMMA residues. Whereas the packing behavior of pentacene on PMMA-transferred CVD graphene is sensitive to the density of PMMA residues. Molecular π-π stacking perpendicular to graphene is observed when pentacene was deposited onto as-transferred graphene. Parallel mode was observed only on the substrates without PMMA residues.

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