Abstract
The aim of this paper is to study Cu diffusion in polymethylsiloxane (LKD-5109) low-k dielectric material manufactured by JSR Micro with respect to applied thermal energy acting alone. Previous study on low-k dielectric thin film uses a combination of electrical and thermal stress to study Cu diffusion producing a combined activation energy. In this paper, a secondary-ion mass spectrometry (SIMS) was used to determine copper diffusion into LKD-5109 thin film on samples baked/annealed at different temperatures ranging from 373K to 573K in forming gas (7% H 2/93% N 2). The results showed that the thermal activation energy (Ea) of Cu thermal diffusion is approximately 0.14eV for baking/annealing temperature ranging from 373K to 523K. The Ea will increase to greater than 0.58eV for temperature above 523K with Cu oxidation. The increase in Ea suggests a transport mechanism due to Cu oxidation where oxidized Cu is a source of copper ions that diffused through the low-k dielectric film.
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