Study of compositional change in the interfacial regions between lead strontium titanate/SiO 2 and lead zirconate titanate/SiO 2 by Auger emission spectroscopy

Abstract

Auger spectroscopy was used to study the compositional change in the interfacial region between ferroelectric thin films, namely lead strontium titanate (PST) and lead zirconate titanate (PZT), and commercially available Si substrates with a 200 nm thick thermal oxide layer. Both PST and PZT thin films were prepared via a sol–gel spin coating method. The thin films from both materials were annealed under the same conditions (temperature and time). It was found that strontium stops the lead diffusion into SiO 2 by forming SrSiO 3/Sr 2SiO 4 and SrO, maintaining a well defined SiO 2 region, while PbSiO 3 is formed in the PZT/SiO 2 system. These results are important for a general understanding of interdiffusions in material interfaces in particular for the realization of future high-dielectric-constant (high-k) oxide layers and for the next generation of advanced electronic devices.