Abstract
Abstract—An experimental stand has been created to assess the characteristics of the electromagnetic field under which the current–voltage (I–V) characteristic of semiconductor elements change. The developed stand was used for a series of experiments on the effect of signals with different parameters on a KD520A diode in order to record changes in the slope of the diode’s I–V characteristic as an onset degradation feature of the p–n-junction. This is done by recording the amplitudes of higher harmonics under the action of microwave signals.
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