Abstract
A new method to determine the trap-modulated mobilities of electrons and holes in insulators from thermally-stimulated-current (TSC) data is described. The formalism is based on the assumption of a box-shaped carrier distribution which maintains its rectangular form while it is spreading through the insulator at increasing temperatures. Correlating each TSC peak with the interaction of the carriers with one particular trapping level, it is possible to evaluate the effect of this trapping level on the carrier mobility and to determine the temperature dependence of the mobility. The theoretical formulation of this method, as well as some experimental results obtained on electron and hole mobilities in Teflon, will be discussed.
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