Abstract
AbstractThe carrier dynamics of vertically aligned InAs/GaAsSb Type‐II quantum dot (QD) structure are comprehensively analyzed by time‐resolved photoluminescence (TRPL) in this study. A columnar InAs QD structure with an overgrown layer of GaAsSb is proposed to enhance the thermal stability and carrier lifetime through the Type‐II energy band alignment and carrier tunneling effect. The carrier lifetimes of columnar QD structures were correspondent with the PL spectra in wavelength‐dependent TRPL measurements because of the electronic coupling effect and the dot‐size dependent oscillator strength. The improved results in this work make columnar Type‐II QDs the promising candidates for novel optoelectronic device application. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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