Abstract
By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the carrier-blocking property of poly-linalyl acetate (PLA) thin layers sandwiched in indium-zinc-oxide (IZO)/PLA/C60/Al double-layer diodes. Results showed that the PLA layer totally blocks electrons crossing the C60 layer, and also blocks holes entering from the IZO layer. The EFISHG measurement effectively substantiates the hole-blocking electron-blocking property of the PLA layer sandwiched in double layer diodes.
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