Abstract
The ionic transference number of rf-sputtered calcia-stabilized zirconia (CSZ) thin films has been investigated, using the Nernst method, in the 300 °–400 °C temperature range and between 10−4 and 2×10−1 atm of oxygen partial pressure. E.M.F. measurements at 342 °C on Ni–NiO/CSZ/Pt–O2 galvanic cells show a voltage roughly 5% lower than the theoretical value and an ionic transference number of about 0.85. Possibilities of such cells being used as oxygen sensors were estimated. Rise times typically observed between 10−3 and 10−2 atm of oxygen were approximately 4 min at 280 °C and 5 s at 420 °C. The influence of Pt deposition parameters on the response speed is pointed out.
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