Abstract
We show in this work a detailed study of the SiO 2/Si interface by means of X-ray absorption spectroscopy (XAS). The Si2p absorption edge was measured for both a thick (50 nm) oxide layer and a native (1.5 nm) oxide. From the comparison between these two spectra we can address XAS features to bulk defects in SiO 2 and to interface defects in the native oxide. We demonstrate the capability of XAS of achieving information about interface defects and suggest its use in more complex systems.
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