Abstract
A study is carried out to evaluate the ability of boron nitride thin films to act as ultraviolet - sensitive semiconductors. Boron nitride thin films are sputter deposited from a BN target in Ar, Ar/N 2 and N 2 discharges. Inter-digital electrodes of various geometries and varying spacing are laid out photolithographically. Results of I(dark) verus voltage and I(u.v.) versus V in the temperature range −40 °C to 80°C are presented here. Preliminary studies on the effect of doping boron nitride films with aluminum and zinc impurities do not yield significant results.
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