Abstract
The underlap double gate MOSFET (UDG-MOSFET) has been well established as a potential candidate for the RF applications. However, before implementation the various process related variations are required to be addressed for the better dependability. In this paper, the effect of process dependent parameter variations on the RF performance of the UDG-MOSFET is analyzed. The process dependent parameters considered are the oxide and the body thicknesses. The RF performance of UDG-MOSFET is analyzed as a function of RF figure of merits (FOMs), intrinsic capacitance (Cgs, Cgd), intrinsic resistance (Rgs, Rgd), transport delay (τm), inductance (Lsd) and analog FOMs transconductance (gm), transconductance generation factor (gm/Id), output resistance (Ro) and intrinsic gain (gmRo). The analysis is performed using the non-quasi static (NQS) small signal model of the UDG-MOSFET.
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