Study of bandgap characteristics of three-dimensional photonic crystal with typical structures

Abstract

The aim of this study was to investigate the bandgap characteristics of three-dimensional photonic crystals of SIC, GaP, InP, GaAs, InAs, InSb, HgTe, and HgSe materials with typical structures under the following different conditions: diamond, face-centered cubic (fcc), and wood. Based on the plane wave expansion method, the influence of factors such as the dielectric constant, density on the upper and lower boundary, and width on the bandgap characteristics of three-dimensional photonic crystals was studied, in addition to the influence of factors such as the filling ratio and the radius of the ball on the bandgap variation in three-dimensional photonic crystals. The results show that the bandgap width of diamond and fcc structures can be improved by increasing the dielectric constant and density. However, the bandgap width of wood structures decreases, as they have wider photonic bandgaps when the filling rate is 0.325 and the ball radius is highly symmetrical. These results provide the theoretical basis for the design of three-dimensional photonic crystal devices.