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Abstract
The band gap shrinkage Δ E g of n-GaAs in relation with the doping concentration ( N) is still controversial in various theories and experiments. Most of the experimental results of Δ E g from photoluminescence have already been questioned to have an overestimation by a few tens of meV. We have carried out detailed temperature-dependent transmission experiments on an n-GaAs homojunction far-infrared (FIR) detector structure. By calculating the transmission spectra taking into account the band tail effect, we obtained a 1/3 power rule of Δ E g in n-GaAs by Δ E g=−3.60×10 −8 (eV cm) N 1/3. Our results support Harmon et al.'s experimental Δ E g results from the electrical measurements of np product in n-GaAs (Appl. Phys. Lett. 64 (1994) 502). The yielded Δ E g is employed to calculate the cut-off wavelength λ c and dark current of n-GaAs homojunction FIR detectors to investigate the potential application. We find that n-GaAs is more suitable for a long λ c detector design, and has a similar dark current behavior with that of Si and p-GaAs homojunction FIR detectors.
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