Abstract
Depth profiles of Au in nitrogen-doped FZ p-Si have been studied by the DLTS after diffusion at 680 - 730°C. It was shown that the Au depth profile could be described by trap-limited diffusion. To explain the experimental profiles the existence of two traps with different capture radius should be assumed. A formation of new electrically active center is detected at a depth close to that of sharp decay in Au concentration. This center is assumed to be a result of Au capture by nitrogen-vacancy complexes and could be associated with the substitutional gold neighboring nitrogen and/or vacancy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
