Abstract
In this work high optical gap amorphous Silicon Carbide films (a-SixCx-1:H) are produced, studied and characterized. The films are grown at low temperature by PECVD technique, looking for applications in optical devices, MEMS and thin film electronic devices on polymeric substrates. Properties like chemical bonding, refraction index, optical gap, chemical composition and corrosion resistance to KOH solutions are analyzed through FTIR, Optical absorption and RBS measurements and etching tests in KOH. Also MOS capacitors using these films as gate dielectric are fabricated in order to analyze its electrical properties, aiming to verify the influence of the deposition temperature in the SiC structure.
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