Abstract
Heteroepitaxial As doped p-type CdTe (100) layers have been grown for the first time on Si(100) by molecular beam epitaxy using stacked BaF2-CaF2 as a buffer. The doping activation is accomplished using an extra Cd source and laser illumination of the substrate during growth. The surface reconstructions have been studied during the CdTe growth under different conditions and the induced effects on Te desorption, Cd migration, and As substitution on Te vacancy site have been correlated. The resistivity of As doped CdTe layers is down to 20 Ω cm. The 8 K photoluminescence spectra of such a layer shows a dominant (A°, X) peak at 1.590 eV with full width at half maximum of 1.2 meV, and the As acceptor level corresponds to a shallow level with ≊60 meV activation energy.
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