Abstract
ABSTRACTWe report on the formation of AuZn/p-GaAs ohmic contacts by short time annealing either in open or closed configuration with a dielectric or metallic capping layer. Quantitative determination of the amount of arsenic losses was of primary concern. This was studied using the Cr-collector method, applying three types of collectors all of them using 100 nm thick Cr film for seizing evaporative As losses. In the first type, the Cr film was deposited onto oxidized Si substrate. In the second type - quartz substrate was used for the deposition of chromium film while the third collector used natural mica as a substrate for the Cr film. The obtained results show that the loss of arsenic is reduced below 2×1014 atom/cm2 using thin 20 nm Au/10 nm Zn/60 nm Au metallization annealed with a capping layer at 440°C for 15 sec. Electrical measurements indicate that under these conditions good ohmic contacts are obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
