Abstract
We have investigated charge carrier recombination and transport mechanism in heterojunction silicon solar cells of different configurations like; Ag/ITO/a-Si:H(p+)/a-Si:H(i)/c-Si(n)/a-Si:H(n+)/ITO/Ag (SHJ cell) and Ag/ITO/MoOx/c-Si(n)/LiFx/Al (MoOx cell). Two cells having S-shape in light current density–voltage (J-V) characteristics are analyzed by the Suns-VOC, and quantum efficiency with voltage- and light-bias measurements. The MoOx cell has shown turn-around in the Suns-VOC graph, whereas a linear behaviour has been observed from the SHJ cell. Quantum efficiency analysis has revealed poor performance of the MoOx cell from the back-side, for this cell the minority carrier diffusion lengths also is estimated. The S-shape in light J-V graph of MoOx cell is due to carrier extraction barrier for trap assisted tunneling at the MoOx/c-Si interface by the insufficient number of traps, which also is reflected as turn-around in the Suns-Voc characteristics. Whereas; the S-shape in J-V graph of SHJ cell is due to minority charge carrier barrier from the band-offset at a-Si/c-Si junction instead of the Schottky contact barrier, since no turn-around in the Suns-Voc graph.
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