Abstract
Behaviors of p-Si implanted with N2+ at 8 keV, i.e. the sheet resistivity ρn/wn of the implanted layer and the junction conductance g as functions of annealing temperature (530–780°C), have been measured by the lateral photovoltaic (LPV) method, and have been analyzed with the aid of an equivalent circuit representing the LPV effect. Since this LPV method does not require electrical contacts on the implanted layer, harmful interactions between the contacts and this extremely thin layer can be avoided. The measurement has shown that with increasing annealing temperature, ρn/wn settles down to a nearly constant value after an initial sharp decrease; while, g on the whole continues to increase. These behaviors have been attributed dominantly to the increase of trap concentrations with increasing anneasing temperature, and thus reverse annealing has been suggested to occur even at a temperature of 530°C.
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