Abstract
Infrared photoluminescence (PL) measurements were used to probe compositional disorder in semiconductor (Hg,Cd)Te alloy. PL was studied in Hg 1 −x Cd x Te samples with x =0.38 and 0.57, fabricated by molecular beam epitaxy on GaAs substrates. Both as-grown and annealed in Hg vapor and in He atmosphere samples were studied. In all the samples, the PL peak energy was found to be red-shifted from the position of band-to-band recombination maximum expected from the energy gap of the material. The value of the shift depended on temperature. This effect was attributed to recombination of excitons localized at compositional fluctuations, and an analysis was carried out that provided a way for evaluation of a fluctuation measure. The amplitude of the fluctuations was shown to strongly decrease as a result of post-growth annealing.
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