Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Abstract

High-Electron-Mobility Transistors In article number 2200536, Ming-Wen Lee, Edward Yi Chang, and colleagues report on AlGaN/GaN HEMTs on silicon substrates using thick copper-metallized interconnects with a Pt diffusion barrier layer for Ka-band application. The reported AlGaN/GaN HEMTs can enhance the device performance with good reliability. High voltage stress and high thermal stability tests of the designed devices are performed to study and demonstrate the potential for future 5G applications.