Abstract
A series of selective (Al,Ga)N quarter-wave reflectors has been grown on sapphire and silicon substrates by metalorganic vapor phase epitaxy. The microstructure of the mirror structures, consisting of GaN quarter-wave layers alternating with AlN, AlGaN or AlN/GaN short-period superlattices, has been assessed in terms of a joint X-ray diffraction (XRD) and transmission electron microscopy (TEM) study.
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