Abstract
The direct vapour transport technique grown single crystals of pure SnS, indium (5 and 15 at%) doped SnS and antimony (5 and 15 at%) doped SnS are used in the present study. The as-grown single crystals are completely characterized. The single crystal growth and comprehensive characterization results are presented in another research paper of the authors. All the as-grown single crystals are p-type semiconductors. The ac and dc electrical resistivity variation with high pressure of the as-grown single crystals up to 5 GPa are measured. The obtained ac and dc electrical resistivity variation with high pressure results are deliberated in this paper.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.