Study of absorption spectra of Er3+ ions in GaN crystals

Abstract

The f–f absorption spectra of Er3+ introduced by diffusion into bulk GaN crystals grown by vapour-phase epitaxy in a chloride system have been studied. The wavelength interval of 518–527 nm corresponding to the region of 4I15/2 → 2H11/2 transitions has been studied in detail at 293, 77, and 2 K. At T = 2 K the 4I15/2 → 2H11/2 spectrum contains six lines in accordance with theoretical predictions for Er3+ in a noncubic crystal field. The positions of levels in the 2H11/2 multiplet correspond to 2.360, 2.361, 2.365, 2.369, 2.379, and 2.386 eV. Both the number and narrow width of lines observed at T = 2 K indicate that in our samples Er3+ ions occupy predominantly the same regular position in GaN crystals. Most probably, Er3+ ions substitute Ga atoms in the crystal lattice.