Abstract
Optical lithography, based on the use of stepped reduction reticles and ultraviolet radiation, is predicted to remain the principle method for defining semiconductor circuits into the next century. However, the manufacture of reticles capable of production use on wafers at 0.25μm and 0.18μm will constitute a significant technical challenge, and this paper reviews the various methods available for reticle pattern generation. Raster scanned electron beam systems have traditionally provided the necessary precision with sufficient writing speed. Latterly, laser tools have become attractive and offer unique advantages, albeit with a limited minimum feature size. The various technologies are reviewed, together with different pattern generation strategies and their implementation.
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