Abstract
This article presents the results of a study of the capacitance- voltage characteristics of MSM photodiode structures with silicon-based potential barriers. The results of studies aimed at creating Au-nCdS-nSi- pCdTe-Au photodiode structures for the spectral range of 1.0-1.4 microns with an area of 29 mm2, which were obtained by vacuum evaporation in a quasi-closed volume of sputtering layers of cadmium sulfide and cadmium telluride, are presented. onto a silicon substrate with resistivity ρ = 607.47 Ohm∙cm. A distinctive feature of the resulting photodiode Au - nCdS-nSi - pCdTe - Au structures are two-way sensitive and have a low capacitance value of C = 23.3 pF at room temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
