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Abstract
In this work, the effect of the a-Si/Al ratio on the poly-Si obtained as a result of aluminium-induced crystallization (AIC) of amorphous silicon a-Si at an annealing temperature of 490 °C has been studied. The dendritic shape of the resulting crystal structures suggests a growth model described by diffusion-limited aggregation. The degree of coverage is slightly dependent on the initial ratio of amorphous silicon to aluminium and ranges from 15% to 25%. This is probably explained by the higher rate of secondary crystallization in the upper layer compared to the lower layer. The maximum average crystallite size is reached at a ratio of 0.9 and is 2.7 µm.
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