Abstract
A new kind of silicon pixel detector with integrated amplification has been built and tested. Each pixel consists of a p-channel JFET located on a fully depleted substrate. The pixel size can be customized by using a drift-chamber-like transport mechanism in each pixel. The homogeneity of the signal response of a small matrix was investigated with a laser diode. The measured rise time and gain of the device are analyzed with a simple small signal model.
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