Study of Γ, L, and X donor states in Si-doped AlGaAs by pressure dependent Hall measurements

Abstract

Using variable pressure for tuning the band structure and variable infrared light pulse intensity for tuning the number of Si-related shallow donor metastable states, we have demonstrated that these states are effective mass-like states linked to each of the conduction band Γ, L, and X minimum. The evolution of their binding energies with their increasing density is shown to decrease and the Mott transition for the Γ-like states has been also observed.