Abstract
A depth profile analysis of modified lead titanate thin films was performed by means of Rutherford Backscattering Spectroscopy (RBS). These films were deposited from sol-gel synthesized solutions onto platinized silicon substrates and crystallized by thermal treatments at temperatures of about 650°C. The chemistry of the solution and the thermal treatment for crystallization affect the heterostructure of the resulting films. Losses of lead and formation of substrate-film interfaces are produced during the crystallization of the films. These film characteristics determine their ferroelectric response.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
