Study and modeling of the breakdown voltage in semi insulating GaAs P+N, PN+, P+N+ junctions diodes presenting deep centers traps

Abstract

This work aims at determining the characteristic I (Breakdown voltage) of the inverse current in GaAs PN junction diode, subject to an reverse polarization while specifying the parameters that influence the Breakdown voltage of the diodes. In this work, we simulated the behavior of the ionization phenomenon by impact Breakdown by avalanche of the PN junctions, subject to an inverse polarization.Will be taken into account both the trapping model in a stationary regime in the P+N, PN+, and P+N+ structures using like material of basis the III–V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. The study of the physical and electric behavior of the semiconductors, and notably is based on the influence of the deep center presence on the characteristic I(V) current-tension, that requires calculation the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in surface, and the breakdown voltage.