Abstract
In this paper, we have investigated the switching voltage and latching mechanism of curved shape latched hollow beam subjected to electrostatic force. The switching voltage of solid bistable beams has been seen to scale with the beam thickness. Unlike Nano-sized beams, which can only be made using E-beam lithography, hollow beams utilizing 50–100 nm of sputtered thin films can be fabricated using conventional lithographic processes. The switching voltage analysis is based on reduced order model (ROM) analysis. The latching criteria for the beam is also derived. It is seen that hollow beams require higher initial elevation compared to solid beams of the same dimension to latch. However, despite this, hollow beams provide significant reduction in switching voltage. For the chosen test case of a 600 µm x 2 µm x 5 µm beam, a 4X reduction in switching voltage and stable equilibrium of beam deflection 15 µmis obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.