Abstract
In this paper, the electric characteristics and DLTS profiles of 600V RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor) with electron beam (EB) irradiation are compared in order to investigate the influence of wafer materials. Floating Zone (FZ) and Magnetic Czochralski (MCZ) wafers with various kinds of carbon (C) and oxygen (O) concentration are evaluated. O concentration does not have a clear impact on V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEsat</sub> . In contrast, C concentration has a clear tendency. DLTS analysis shows that C concentration affects the degree of Si defects induced by EB irradiation which results in the differences of the electric characteristics.
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