Studies on transparent spinel magnesium indium oxide thin films prepared by chemical spray pyrolysis

Abstract

Ternary semiconducting oxide compound magnesium indium oxide films (MgIn 2O 4), manifesting high transparency were prepared by metal organic chemical spray pyrolysis technique. Precursors prepared for various cationic ratios of Mg/In = 0.35, 0.40, 0.45 and 0.50 were thermally sprayed onto quartz substrates, decomposed at 450 °C and the spinel phase evolution was studied. X-ray diffraction, Rutherford backscattering and X-ray photoelectron spectroscopy studies have been conducted to confirm the formation of single-phase MgIn 2O 4 films with Mg/In ratio 0.50. From optical transmission studies, the observed optical band gaps varied from 3.18 to 3.86 eV (0.35 < Mg/In < 0.5). The electrical conductivity variations of these films were measured in the temperature range between 30 and 150 °C by four-probe technique (34.07–1.44 × 10 − 5 S cm − 1 ) and the Hall coefficient showed n-type electrical conduction and high carrier concentration (0.16 × 10 20–0.89 × 17 cm − 3 ).