Abstract
In this paper ZnSb thin films were prepared by radio frequency magnetron sputteringfrom a stoichiometric Zn4Sb3 target followed by thermal annealing. The influence of sputteringconditions on microstructure, surface morphology, crystallinity and electrical transport propertieswere investigated. For the range of sputtering power of 50 W to 125 W and working pressure of 0.7Pa, it was found that the content of compound ZnSb phase in the films as well as film crystallinitycould be enhanced greatly by increasing the sputtering power, and this effect may be reinforced bydecreasing the working pressure to 0.2 Pa. At 0.7 Pa, A maximum value of 2.99 μW/cmK2 of powerfactor measured at room temperature was obtained at 100 W. The sample prepared at the samepower and lower pressure of 0.2 Pa has a room temperature power factor of 5.46 μW/cmK2 which isalmost doubled.
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