Abstract

In this study, tin-doped indium oxide (ITO) thin films were fabricated via jet-nebulized spray pyrolysis method. The structural, micro structural, and optical properties of the ITO thin films were investigated via X-ray diffraction (XRD), ultraviolet–visible spectroscopy, and scanning electron microscopy (SEM). The XRD patterns of the thin films indicated a preferred orientation along the (222) plane, which ensures the formation of a pure phase with a high degree of crystallinity. The PL analysis showed that the film has a high transmittance of 80 %. The SEM observations showed the formation of dense films with grain sizes in the range of 25–50 nm. The X-ray photoelectron spectroscopy results displayed the single valance state and chemical bonding state of In and Sn in indium tin oxide. The electrical resistivity of the ITO substantially changed with the incorporation of Sn into the In2O3 structure. When 10 wt% Sn was added as a dopant, the minimum resistivity was 0.10 Ω-m.

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