Abstract
Various types of n-type buffer layers have been used in organic electronic devices. These buffer layers turned out to expedite carrier injection and reduce series resistance, leading to good performance of organic electronic devices. In our current work, we have fabricated organic photovoltaic (OPV) cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/TiOx/DMDCNQI/AI which were fabricated in the presence of air. To incorporate the individual advantages of each n-type buffer layer, a DMDCNQI and TiOx layers were inserted to act as n-type double buffer layers. This leads to an increase of short-circuit current (JSC) and fill factor (FF) with good stability, in comparison to P3HT:PCBM based conventional cells. The results imply that the structures of double buffer layers can provide possible alternative to achieving high performance and air durability.
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