Abstract
In the present communication, a model has been developed to understand the growth kinetics of binary and ternary compound semiconductors during liquid phase electroepitaxy (LPEE) growth. The two major factors influencing the growth in this technique are Peltier effect and electromigration. In the present model, a transport equation has been solved numerically by incorporating the Peltier effect and electromigration conditions. The effect of electromigration due to application of electric field has been incorporated in the diffusion equation. Applying the boundary conditions, the new equation has been solved numerically.
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