Abstract
CdSe thin films doped with 10% of Indium and 10 % Zinc were prepared by electron beam evaporation technique and the films were annealed at 200 oC for 30 min. Well crystalline films were deposited and the crystallite variation was studied for doping effect and it was found to be about 48 and 52 nm respectively. Optical band gap values are found to be modified by doping as well as annealing. PEC solar cells were fabricated using CdSe:In and CdSe:Zn films which showed 1.54% and 1.88% conversion efficiency respectively. Annealed films showed considerable influence in the optoelctronic properties and its improvement in conversion efficiency to about 2.75% and 2.87% respectively. In order to increase the photo output the films were annealed at 200o C at temperature. The photo output was Voc = 0.476 V, Jsc = 9.8 mA cm-2, ff = 0.44, η = 2.76 % at 80 mW cm-2. Photoetching increased the output parameters.
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