Abstract
Microstructural studies have been carried out on yttria doped zirconia (YDZ) thin films grown on MgO(100) and Ge(100) single crystal substrates using in-situ transmission electron microscopy. Microstructure evolution is strongly impeded in films grown on Ge (100) when thickness is less than 30 nm. Electrical studies show one order of enhancement in total conductivity in films of thickness less than 20 nm grown on MgO substrate. For 17 nm films that show enhanced conductivity, the activation energy obtained from electrical relaxation is ∼ 1.7 eV while it is ∼ 1.1 eV for 933 nm thick films.
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