Abstract
In this paper, high-photosensitive CdS1–xSex films are synthesized by a two-step technique, which includes the chemical bath deposition of CdS films and a following selenization process. The structural, optical, and photoelectric properties of the CdS1–xSex films were investigated. With the substitution of selenium for sulfur atoms, grain sizes of the as-prepared CdS1–xSex films are effectively enlarged and reach the scales of the films thickness when the selenization temperature exceeds 450 °C. With increasing the selenization temperature from 350 to 550 °C, the band gaps of CdS1–xSex films gradually decrease from 2.37 to 1.82 eV. Under the co-action of the grain-size enlargement and band-gap decrease, the CdS1–xSex films fabricated at 450 °C show very pronounced photosensitivity. Noteworthy, the ratio of photo to dark conductivity of the CdS1–xSex film selenized at 450 °C reaches 1.1 × 105, suggesting a promising application potential in the photoelectric devices.
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