Abstract
Nanostructured oxides are attracting enormous interest due to their variety of applications such as energy materials, dielectrics, ferroelectrics, piezoelectrics, superconductors, spintronics, catalysts, biological agents, etc. For the present study, ZnO:SnO2 nanocomposites were prepared by addition of nanostructured SnO2 in ZnO nanostructured matrix. X–ray diffraction (XRD) measurement reveals the single phase nature of pure ZnO and SnO2 oxides as well as their composites. Variation in a.c. conductivity has been discussed on the basis of Jonscher's universal power law which suggests that charge conduction is governed by correlated barrier hopping (CBH) mechanism. Estimated maximum barrier height is found to decrease with increase in SnO2 nanoparticles content in the nanostructured ZnO matrix. Dielectric behavior has been understood in the context of relaxation formula and universal dielectric relaxation (UDR) model. Relaxation fits suggest that SnO2 content suppresses the relaxation time for dipoles to get aligned whereas it enhances the relaxation time distribution factor.
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