Studies on solution-grown thin films of ZnxCd1−xS

Abstract

Structural, optical, and electrical properties of thin films of ZnxCd1−xS (0≤x≤1.0) prepared by the solution-growth technique are reported as a function of x. As-grown films are composed of a hexagonal phase in the range 0≤x≤0.8 and of cubic phase for x=1.0. The lattice parameters a and c vary with x following Vegard’s law. The band gaps for as-grown ZnxCd1−xS films are found to vary linearly with x from 2.40 eV for CdS to 3.6 eV for ZnS. The resistivity increases from 109 to 1012 Ω cm in the whole range 0≤x≤1.0. The effect of indium doping and H2 annealing on the above properties is also investigated.