Abstract
The silicon-on-insulator-multilayer (SOIM) structures were proposed and successfully fabricated by epitaxial layer transfer technology. The properties of the structures were investigated using cross-sectional transmission electron microscopy (XTEM) and spreading resistance profiling. Experimental results show that the buried Si 3N 4 layer is amorphous and the new SOIM sample has good structural and electrical properties. The new SOIM device has been verified in two-dimensional device simulation and indicated that the new structures reduce device self-heating and increase the drain of the SOI MOSFET.
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